photodiode si photodiode with preamp photodiode and preamp integrated with feedback resistance and capacitance S9269, s9270 S9269 and s9270 are low-noise photosensors consisting of a si photodiode, op amp, and feedback resistance and capacitance, all integrated into a ceramic package with a surface size equal to our standard ceramic packages. these photosensors are ideal for a wide range of photometric applications including analytical equipment and measurement equipment. the active area of the photodiode i s internally connected to the gnd terminal making it highly resistant to emc noise. combinations with various photodiodes such as uv sensitivity enhanced type, ir sensitivity suppressed type and ir sensitivity enhanced type are also available. (custom order pr oducts) features applications l si photodiode for visible to near ir si precision photometry l small package S9269: 10.1 8.9 40 t mm s9270: 16.5 15.0 4.15 t mm l active area S9269: 5.8 5.8 mm s9270: 10 10 mm l fet input operational amplifier with low power dissipation l built-in rf=1 g ? , cf=5 pf l low noise and nep l precision photometry l general-purpose optical measurement 1 absolute maximum ratings (ta=25 c) parameter symbol value unit supply voltage (op amp) vcc 20 v power dissipation p 500 mw operating temperature topr -20 to +60 c storage temperature tstg -20 to +80 c electrical and optical characteristics (ta=25 c, vcc=15 v, r l =1 m ? ) S9269 s9270 parameter symbol condition min. typ. max. min. typ. max. unit spectral response range - 320 to 1100 -- 320 to 1100 -nm peak sensitivity wavelength p - 960 - - 960 - nm feed back resistance (built-in) * rf - 1 - - 1 - g ? feed back capacitance (built-in) * cf - 5 - - 5 - pf photo sensitivity s = p 0.5 0.62 - 0.5 0.62 - v/nw dark state, f=10 hz - 7.3 - - 9.7 - output noise voltage vn dark state, f=20 hz - 6.5 - - 9.1 - vrms/hz 1/2 = p, f=10 hz - 12 - - 16 - noise equivalent power nep = p, f=20 hz - 12 - - 17 - fw/hz 1/2 output offset voltage vos dark state - 4 - - 4 - mv cut-off frequency fc -3 db - 32 - - 32 - hz output voltage swing vo r l =10 k ? - 13 - - 13 - v supply current icc dark state - 0.3 0.6 - 0.3 0.6 ma * custom devices available with different rf, cf, etc.
si photodioe with preamp S9269, s9270 2 spectral response kspdb0239ea 0 200 wavelength (nm) photo sensitivity (v/nw) 1200 1000 800 600 400 (typ. ta=25 ?c, vcc=?5 v) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 kspdb0240ea frequency response -30 0.001 0.01 0.1 1 10 frequency (khz) relative output (db) 100 (typ. ta=25 ? c, vcc=15 v) -20 -10 0 10 nep vs. frequency kspdb0241ea kspdb0242ea output noise voltage vs. frequency 10 0 10 1 10 2 10 3 10 4 0.001 0.01 0.1 1 10 frequency (khz) nep (fw/hz 1/2 ) 100 1000 (typ. ta=25 ? c, vcc=15 v) 10 5 S9269 s9270 0.01 0.1 1 10 0.001 0.01 0.1 1 10 frequency (khz) output noise voltage (vrms/hz 1/2 ) 100 1000 (typ. ta=25 ? c, vcc=15 v) 100 S9269 s9270 application circuit example rf=1 g cf=5 pf o pkg v+ v- g photodiode - + kspdc0050ea
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2004 hamamatsu photonics k.k. si photodioe with preamp S9269, s9270 cat. no. kspd1066e01 dec. 2004 dn dimensional outlines (unit: mm, tolerance unless otherwise noted: 0.2) S9269 s9270 kspda0160ea kspda0161ea 10.1 0.1 (ceramic) (4 ) 0.45 cu-zn alloy (4 )( 1.0) 8.9 0.1 (ceramic) 0.75 2.0 0.1 (2.0) (5.0) 1.7 active area (5.83 5.83) ceramic photosensitive surface pwb solder active area position accuracy versus package center -0.165 x +0.335 -0.25 y +0.25 gnd vcc- out vcc+ 1.0 max. 5.7 1.8 7.4 0.1 7.62 8.0 4.0 1.5 2.54 0.1 2.54 0.1 8.8 (pwb) 10.0 (pwb) y x 16.5 0.2 (ceramic) y x 12.7 13.8 14.8 (pwb) 5.08 0.1 5.08 0.1 12.5 1.0 max. 1.7 0.9 2.15 0.1 (2.0) (5.0) (4 ) 0.45 cu-zn alloy (4 )( 1.0) 15.0 0.15 (ceramic) active area (10 10) photosensitive surface ceramic pwb solder 10.8 2.25 0.5 2.75 12.5 0.2 16.3 (pwb) active area position accuracy versus package center -0.3 x, y +0.3 gnd vcc- out vcc+ esd S9269, s9270 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials, etc. as a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. the following precautions must be observed during use: to protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or similar tools to ground the operator's body via a high impedance resistor (1 m 3 a semiconductive sheet (1 m to 100 0 ) should be laid on both the work table and the floor in the work area. when soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 m 3 for containers and packing, use of a conductive material or aluminum foil is effective. when using an antistatic material, us e one with a resistance of 0.1 m /cm 2 to 1 g /cm 2. wiring if electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device performance or destroy the device. always check the wiring and dimensional outline to avoid misconnection.
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